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high-temperature oxidation resistance

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The high-temperature oxidation resistance of amorphous ZrSiN and WSiN films with a high Si content (20 at.%) deposited by reactive
dc magnetron sputtering at different partial pressures of nitrogen was systematically investigated by means of a symmetrical high-resolution
thermogravimetry in a flowing air up to an annea领 temperature of 1300 8C (a temperature limit for Si(1 0 0) substrate). Additional analyses
including X-ray diffraction (XRD), light optical microscopy (LOM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and
microhardness measurement were carried out as well. The obtained results showed (i) an excellent high-temperature oxidation resistance of the Zr
SiN films up to 1300 8C, (ii) a considerably lower oxidation resistance of the WSiN films. The WSiN films are completely oxidized at 800 8C
with a subsequent volatilization of unstableWOx oxides. On the other hand, the ZrSiN films are oxidized only very slightly on the surface, where
a stable oxide barrier layer preventing further inward oxygen diffusion is formed. The thickness of the oxide layer is only about of 3% of the total
film thickness. The phase composition, thermal stability of individual phases and amorphous structure were found to be key factors to achieve a
high oxidation resistance. 超高温合金抗氧化分析仪
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