参数：

表面电阻：小于600Ω/sq

定做：＜300Ω/sq

透明度：> 95%

制备方法：

1）采用化学气相沉积方法制备铜基石墨烯

2）石墨烯从铜转移到硅衬底

Parameter:

Sheet Resistance: <600Ω/sq

Custom Order: <300Ω/sq

Transparency: >95%

Preparation Method:

1) Copper based graphene is prepared by CVD method.

2) Graphene is transferred from copper to silicon substrate.