Features

• Low temperature (LT) grown GaBiAs dipole  structure

• Optimized for lasers with  1030 nm and shorter  wavelength (cost effective)

• Wide spectral range  0.2-5 THz

• Build-in hemispherical  high-resistivity silicon lens

Applications

• THz time domain  spectroscopy

• THz imaging

• Optical pump – THz probe spectroscopy

THz emitter

THz emitter from LT GaBiAs epitaxial layer has on its surface a   coplanar Hertzian dipole type antenna structure with a width of 70 µm,   the width of the photosensitive gap is 20 µm. GaBiAs layer is mesa-et   ched in order to achieve high dark resistance and to simplify the laser   beam alignment. High photosensitivity of the material allows to use for   the excitation very low average power generated by, e.g., femtosecond   fiberlasers. The efficiencyof the optical to THz power conversion   reaching 0.0007 is larger than for other photoconductive THz devices.

Average THz power as a function on the bias on GaBiAs emitter measured by the Golay cell

THz Detector

THz detectors manufactured from newly developed GaBiAs epitaxial   layers can be used for in TDS systems activated by 1060 nm  and shorter   wavelength laser pulses. High electron mobility (~5000 cm2/Vs) in the   layer guaranties excellent sensitivity of the  device; due to the   shorter than 0.5 ps electron lifetime the detector is sensitive in the   frequency range from 200 GHz to 5 THz. Detector is mounted together with   15 mm diameter hemispherical lens from high-resistivity silicon in an   opto-mechanical holder with in-plane micro positioning capability and   SMA connector.