In this work, K-doped ZnO thin films were prepared by a solgel
method on Si(111) and glass substrates. The effect of different Kdoping
concentrations on structural and optical properties of the
ZnO thin films was studied. The results showed that the 1 at.%
K-doped ZnO thin film had the best crystallization quality and
the strongest ultraviolet emission ability. When the concentration
of K was above 1 at.%, the crystallization quality and ultraviolet
emission ability dropped. For the K-doped ZnO thin films, there
was not only ultraviolet emission, but also a blue emission
signal in their photoluminescent spectra. The blue emission might
be connected with K impurity or/and the intrinsic defects (Zn
interstitial and Zn vacancy) of the ZnO thin films. 扫描探针显微镜(SPM/AFM/STM)
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